Nexperia USA Inc. - PSMN1R5-30BLEJ

KEY Part #: K6418188

PSMN1R5-30BLEJ Pricing (USD) [54990pcs Stock]

  • 1 pcs$0.71104
  • 800 pcs$0.69541

Part Number:
PSMN1R5-30BLEJ
Manufacturer:
Nexperia USA Inc.
Detailed description:
MOSFET N-CH 30V 120A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Thyristors - TRIACs, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
We specialize in Nexperia USA Inc. PSMN1R5-30BLEJ electronic components. PSMN1R5-30BLEJ can be shipped within 24 hours after order. If you have any demands for PSMN1R5-30BLEJ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN1R5-30BLEJ Product Attributes

Part Number : PSMN1R5-30BLEJ
Manufacturer : Nexperia USA Inc.
Description : MOSFET N-CH 30V 120A D2PAK
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.5 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 228nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 14934pF @ 15V
FET Feature : -
Power Dissipation (Max) : 401W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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