PSMN1R5-30BLEJ Pricing (USD) [54990pcs Stock]
- 1 pcs$0.71104
- 800 pcs$0.69541
- Part Number:
- PSMN1R5-30BLEJ
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 30V 120A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PSMN1R5-30BLEJ electronic components. PSMN1R5-30BLEJ can be shipped within 24 hours after order. If you have any demands for PSMN1R5-30BLEJ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN1R5-30BLEJ Product Attributes
Part Number :
PSMN1R5-30BLEJ
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 30V 120A D2PAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.5 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
228nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
14934pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
401W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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