ON Semiconductor - FDP047AN08A0-F102

KEY Part #: K6417744

FDP047AN08A0-F102 Pricing (USD) [40080pcs Stock]

  • 1 pcs$0.97554

Part Number:
FDP047AN08A0-F102
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 75V 80A TO-220AB-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Power Driver Modules, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in ON Semiconductor FDP047AN08A0-F102 electronic components. FDP047AN08A0-F102 can be shipped within 24 hours after order. If you have any demands for FDP047AN08A0-F102, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDP047AN08A0-F102 Product Attributes

Part Number : FDP047AN08A0-F102
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 75V 80A TO-220AB-3
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 75V
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 310W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3