BSP129H6327XTSA1 Pricing (USD) [244941pcs Stock]
- 1 pcs$0.15101
- 1,000 pcs$0.13079
- Part Number:
- BSP129H6327XTSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 240V 350MA SOT223.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Power Driver Modules, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSP129H6327XTSA1 electronic components. BSP129H6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSP129H6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP129H6327XTSA1 Product Attributes
Part Number :
BSP129H6327XTSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 240V 350MA SOT223
Series :
SIPMOS®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
240V
Current - Continuous Drain (Id) @ 25°C :
350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
0V, 10V
Rds On (Max) @ Id, Vgs :
6 Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id :
1V @ 108µA
Gate Charge (Qg) (Max) @ Vgs :
5.7nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
108pF @ 25V
FET Feature :
Depletion Mode
Power Dissipation (Max) :
1.8W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-SOT223-4
Package / Case :
TO-261-4, TO-261AA
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