[7953pcs Stock]
- Part Number:
- SPB35N10 G
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 35A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - TRIACs and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Infineon Technologies SPB35N10 G electronic components. SPB35N10 G can be shipped within 24 hours after order. If you have any demands for SPB35N10 G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPB35N10 G Product Attributes
Part Number :
SPB35N10 G
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 35A D2PAK
Series :
SIPMOS®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
44 mOhm @ 26.4A, 10V
Vgs(th) (Max) @ Id :
4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1570pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
150W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO263-3-2
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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