IXTQ110N055P Pricing (USD) [31018pcs Stock]
- 1 pcs$1.46896
- 30 pcs$1.46166
- Part Number:
- IXTQ110N055P
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 55V 110A TO-3P.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Power Driver Modules and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in IXYS IXTQ110N055P electronic components. IXTQ110N055P can be shipped within 24 hours after order. If you have any demands for IXTQ110N055P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTQ110N055P Product Attributes
Part Number :
IXTQ110N055P
Manufacturer :
IXYS
Description :
MOSFET N-CH 55V 110A TO-3P
Series :
PolarHT™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
55V
Current - Continuous Drain (Id) @ 25°C :
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
13.5 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
76nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2210pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
390W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3P
Package / Case :
TO-3P-3, SC-65-3
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