TK39J60W,S1VQ Pricing (USD) [9590pcs Stock]
- 1 pcs$4.72871
- 25 pcs$3.87569
- 100 pcs$3.49762
- 500 pcs$2.93043
- Part Number:
- TK39J60W,S1VQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 600V 38.8A TO-3P.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Thyristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK39J60W,S1VQ electronic components. TK39J60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK39J60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK39J60W,S1VQ Product Attributes
Part Number :
TK39J60W,S1VQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 600V 38.8A TO-3P
Series :
DTMOSIV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
65 mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id :
3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 300V
FET Feature :
Super Junction
Power Dissipation (Max) :
270W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3P(N)
Package / Case :
TO-3P-3, SC-65-3
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