FDS4435BZ Pricing (USD) [348166pcs Stock]
- 1 pcs$0.10624
- 2,500 pcs$0.10238
- Part Number:
- FDS4435BZ
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CH 30V 8.8A 8-SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules, Transistors - Programmable Unijunction, Thyristors - TRIACs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDS4435BZ electronic components. FDS4435BZ can be shipped within 24 hours after order. If you have any demands for FDS4435BZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDS4435BZ Product Attributes
Part Number :
FDS4435BZ
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CH 30V 8.8A 8-SOIC
Series :
PowerTrench®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
20 mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
1845pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOIC
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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