IPN80R1K4P7ATMA1 Pricing (USD) [206252pcs Stock]
- 1 pcs$0.17933
- 3,000 pcs$0.17688
- Part Number:
- IPN80R1K4P7ATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CHANNEL 800V 4A SOT223.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Diodes - Rectifiers - Single, Diodes - Bridge Rectifiers, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPN80R1K4P7ATMA1 electronic components. IPN80R1K4P7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPN80R1K4P7ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN80R1K4P7ATMA1 Product Attributes
Part Number :
IPN80R1K4P7ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CHANNEL 800V 4A SOT223
Series :
CoolMOS™ P7
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 500V
FET Feature :
-
Power Dissipation (Max) :
7W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-SOT223
Package / Case :
TO-261-3
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