Microsemi Corporation - APT10090BLLG

KEY Part #: K6397848

APT10090BLLG Pricing (USD) [5235pcs Stock]

  • 1 pcs$9.10384
  • 10 pcs$8.27546
  • 100 pcs$6.69110

Part Number:
APT10090BLLG
Manufacturer:
Microsemi Corporation
Detailed description:
MOSFET N-CH 1000V 12A TO-247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in Microsemi Corporation APT10090BLLG electronic components. APT10090BLLG can be shipped within 24 hours after order. If you have any demands for APT10090BLLG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT10090BLLG Product Attributes

Part Number : APT10090BLLG
Manufacturer : Microsemi Corporation
Description : MOSFET N-CH 1000V 12A TO-247
Series : POWER MOS 7®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 950 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 71nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1969pF @ 25V
FET Feature : -
Power Dissipation (Max) : 298W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247 [B]
Package / Case : TO-247-3

You May Also Be Interested In
  • IRLR024NPBF

    Infineon Technologies

    MOSFET N-CH 55V 17A DPAK.

  • IRLR2908PBF

    Infineon Technologies

    MOSFET N-CH 80V 30A DPAK.

  • IXFY4N60P3

    IXYS

    MOSFET N-CH 600V 4A TO-252.

  • TK380A60Y,S4X

    Toshiba Semiconductor and Storage

    MOSFET N-CH 600V 9.7A TO220SIS.

  • TK72A12N1,S4X

    Toshiba Semiconductor and Storage

    MOSFET N-CH 120V 72A TO-220.

  • TK14A65W5,S5X

    Toshiba Semiconductor and Storage

    MOSFET N-CH 650V 13.7A TO-220.