IRFHS9301TRPBF Pricing (USD) [349285pcs Stock]
- 1 pcs$0.10590
- 4,000 pcs$0.09710
- Part Number:
- IRFHS9301TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET P-CH 30V 6A PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Transistors - Special Purpose, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFHS9301TRPBF electronic components. IRFHS9301TRPBF can be shipped within 24 hours after order. If you have any demands for IRFHS9301TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHS9301TRPBF Product Attributes
Part Number :
IRFHS9301TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH 30V 6A PQFN
Series :
HEXFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
6A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
37 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id :
2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
580pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.1W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-PQFN (2x2)
Package / Case :
6-PowerVDFN
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