Toshiba Semiconductor and Storage - TK65S04N1L,LQ

KEY Part #: K6402047

TK65S04N1L,LQ Pricing (USD) [114189pcs Stock]

  • 1 pcs$0.34530
  • 2,000 pcs$0.34358

Part Number:
TK65S04N1L,LQ
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 40V 65A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - Special Purpose, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK65S04N1L,LQ electronic components. TK65S04N1L,LQ can be shipped within 24 hours after order. If you have any demands for TK65S04N1L,LQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK65S04N1L,LQ Product Attributes

Part Number : TK65S04N1L,LQ
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 40V 65A DPAK
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 65A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.3 mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2550pF @ 10V
FET Feature : -
Power Dissipation (Max) : 107W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK+
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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