Description :
MOSFET N-CH
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
4700V
Current - Continuous Drain (Id) @ 25°C :
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
20 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id :
6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
6860pF @ 25V
Power Dissipation (Max) :
220W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
ISOPLUSi5-Pak™
Package / Case :
ISOPLUSi5-Pak™