IXYS - IXTL2N470

KEY Part #: K6395633

IXTL2N470 Pricing (USD) [1337pcs Stock]

  • 1 pcs$32.36428

Part Number:
IXTL2N470
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in IXYS IXTL2N470 electronic components. IXTL2N470 can be shipped within 24 hours after order. If you have any demands for IXTL2N470, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTL2N470 Product Attributes

Part Number : IXTL2N470
Manufacturer : IXYS
Description : MOSFET N-CH
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 4700V
Current - Continuous Drain (Id) @ 25°C : 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 20 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 180nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6860pF @ 25V
FET Feature : -
Power Dissipation (Max) : 220W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : ISOPLUSi5-Pak™
Package / Case : ISOPLUSi5-Pak™