Infineon Technologies - IPSA70R900P7SAKMA1

KEY Part #: K6401359

IPSA70R900P7SAKMA1 Pricing (USD) [126380pcs Stock]

  • 1 pcs$0.29267

Part Number:
IPSA70R900P7SAKMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET COOLMOS 700V TO251-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Transistors - Special Purpose, Thyristors - SCRs, Transistors - JFETs and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Infineon Technologies IPSA70R900P7SAKMA1 electronic components. IPSA70R900P7SAKMA1 can be shipped within 24 hours after order. If you have any demands for IPSA70R900P7SAKMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPSA70R900P7SAKMA1 Product Attributes

Part Number : IPSA70R900P7SAKMA1
Manufacturer : Infineon Technologies
Description : MOSFET COOLMOS 700V TO251-3
Series : CoolMOS™ P7
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 700V
Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 900 mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs : 6.8nC @ 400V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 211pF @ 400V
FET Feature : -
Power Dissipation (Max) : 30.5W (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO251-3
Package / Case : TO-251-3 Short Leads, IPak, TO-251AA

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