SIZF300DT-T1-GE3 Pricing (USD) [166378pcs Stock]
- 1 pcs$0.22231
- Part Number:
- SIZF300DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET DUAL N-CHAN 30V PPAIR 3X3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIZF300DT-T1-GE3 electronic components. SIZF300DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF300DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZF300DT-T1-GE3 Product Attributes
Part Number :
SIZF300DT-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET DUAL N-CHAN 30V PPAIR 3X3
Series :
TrenchFET® Gen IV
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Rds On (Max) @ Id, Vgs :
4.5 mOhm @ 10A, 10V, 1.84 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V, 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 15V, 3150pF @ 15V
Power - Max :
3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-PowerWDFN
Supplier Device Package :
8-PowerPair® (6x5)
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