Vishay Siliconix - SI4421DY-T1-E3

KEY Part #: K6396426

SI4421DY-T1-E3 Pricing (USD) [105571pcs Stock]

  • 1 pcs$0.37038
  • 2,500 pcs$0.29542

Part Number:
SI4421DY-T1-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CH 20V 10A 8-SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Diodes - Zener - Arrays, Diodes - RF, Transistors - Special Purpose, Power Driver Modules, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix SI4421DY-T1-E3 electronic components. SI4421DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4421DY-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4421DY-T1-E3 Product Attributes

Part Number : SI4421DY-T1-E3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 20V 10A 8-SOIC
Series : TrenchFET®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 8.75 mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id : 800mV @ 850µA
Gate Charge (Qg) (Max) @ Vgs : 125nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 1.5W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)