Vishay Siliconix - SIHU3N50D-GE3

KEY Part #: K6393087

SIHU3N50D-GE3 Pricing (USD) [237821pcs Stock]

  • 1 pcs$0.15553
  • 3,000 pcs$0.14635

Part Number:
SIHU3N50D-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 500V 3A TO251 IPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Diodes - Zener - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays and Transistors - JFETs ...
Competitive Advantage:
We specialize in Vishay Siliconix SIHU3N50D-GE3 electronic components. SIHU3N50D-GE3 can be shipped within 24 hours after order. If you have any demands for SIHU3N50D-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHU3N50D-GE3 Product Attributes

Part Number : SIHU3N50D-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 500V 3A TO251 IPAK
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.2 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 175pF @ 100V
FET Feature : -
Power Dissipation (Max) : 69W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-251
Package / Case : TO-251-3 Short Leads, IPak, TO-251AA