Vishay Semiconductor Diodes Division - VS-10ETF10FP-M3

KEY Part #: K6434282

VS-10ETF10FP-M3 Pricing (USD) [41658pcs Stock]

  • 1 pcs$0.99045
  • 1,000 pcs$0.98552

Part Number:
VS-10ETF10FP-M3
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 1KV 10A TO220FP. Schottky Diodes & Rectifiers New Input Diodes - FULLPAK-220-e3
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays, Diodes - Bridge Rectifiers, Thyristors - TRIACs, Transistors - Special Purpose, Diodes - Zener - Arrays, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-10ETF10FP-M3 electronic components. VS-10ETF10FP-M3 can be shipped within 24 hours after order. If you have any demands for VS-10ETF10FP-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-10ETF10FP-M3 Product Attributes

Part Number : VS-10ETF10FP-M3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 1KV 10A TO220FP
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1000V
Current - Average Rectified (Io) : 10A
Voltage - Forward (Vf) (Max) @ If : 1.33V @ 10A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 310ns
Current - Reverse Leakage @ Vr : 100µA @ 1000V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : TO-220-2 Full Pack
Supplier Device Package : TO-220-2 Full Pack
Operating Temperature - Junction : -40°C ~ 150°C

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