Vishay Semiconductor Diodes Division - VS-8EWF10STR-M3

KEY Part #: K6434232

VS-8EWF10STR-M3 Pricing (USD) [46957pcs Stock]

  • 1 pcs$0.83266
  • 2,000 pcs$0.71517

Part Number:
VS-8EWF10STR-M3
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 1KV 8A D-PAK. Schottky Diodes & Rectifiers New Input Diodes - D-PAK-e3
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose, Transistors - Programmable Unijunction, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Diodes - RF and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-8EWF10STR-M3 electronic components. VS-8EWF10STR-M3 can be shipped within 24 hours after order. If you have any demands for VS-8EWF10STR-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-8EWF10STR-M3 Product Attributes

Part Number : VS-8EWF10STR-M3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 1KV 8A D-PAK
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1000V
Current - Average Rectified (Io) : 8A
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 8A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 270ns
Current - Reverse Leakage @ Vr : 100µA @ 1000V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : D-PAK (TO-252AA)
Operating Temperature - Junction : -40°C ~ 150°C

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