Infineon Technologies - SI4410DYTRPBF

KEY Part #: K6420529

SI4410DYTRPBF Pricing (USD) [205934pcs Stock]

  • 1 pcs$0.17961
  • 4,000 pcs$0.15349

Part Number:
SI4410DYTRPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 30V 10A 8-SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Thyristors - TRIACs, Transistors - Special Purpose, Thyristors - SCRs - Modules and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Infineon Technologies SI4410DYTRPBF electronic components. SI4410DYTRPBF can be shipped within 24 hours after order. If you have any demands for SI4410DYTRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4410DYTRPBF Product Attributes

Part Number : SI4410DYTRPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 30V 10A 8-SOIC
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 13.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1585pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)

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