RS3E135BNGZETB Pricing (USD) [248329pcs Stock]
- 1 pcs$0.14895
- 2,500 pcs$0.14130
- Part Number:
- RS3E135BNGZETB
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CHANNEL 30V 9.5A 8SOP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - RF, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RS3E135BNGZETB electronic components. RS3E135BNGZETB can be shipped within 24 hours after order. If you have any demands for RS3E135BNGZETB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS3E135BNGZETB Product Attributes
Part Number :
RS3E135BNGZETB
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CHANNEL 30V 9.5A 8SOP
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
14.6 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
8.3nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
680pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOP
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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