IRFI4227PBF Pricing (USD) [28338pcs Stock]
- 1 pcs$1.32651
- 10 pcs$1.19738
- 100 pcs$0.91271
- 500 pcs$0.70988
- 1,000 pcs$0.58818
- Part Number:
- IRFI4227PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 200V 26A TO-220FP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - IGBTs - Single, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Transistors - JFETs and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFI4227PBF electronic components. IRFI4227PBF can be shipped within 24 hours after order. If you have any demands for IRFI4227PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFI4227PBF Product Attributes
Part Number :
IRFI4227PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 26A TO-220FP
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
46W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB Full-Pak
Package / Case :
TO-220-3 Full Pack
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