[150pcs Stock]
- Part Number:
- IPP10N03LB G
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 50A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPP10N03LB G electronic components. IPP10N03LB G can be shipped within 24 hours after order. If you have any demands for IPP10N03LB G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP10N03LB G Product Attributes
Part Number :
IPP10N03LB G
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 50A TO-220
Series :
OptiMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
9.9 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1639pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
58W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO220-3-1
Package / Case :
TO-220-3
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