Infineon Technologies - IRFH4226TRPBF

KEY Part #: K6402743

[2598pcs Stock]


    Part Number:
    IRFH4226TRPBF
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET N-CH 25V 70A PQFN 5X6.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - SCRs - Modules, Diodes - Rectifiers - Arrays, Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - IGBTs - Modules ...
    Competitive Advantage:
    We specialize in Infineon Technologies IRFH4226TRPBF electronic components. IRFH4226TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH4226TRPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFH4226TRPBF Product Attributes

    Part Number : IRFH4226TRPBF
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 25V 70A PQFN 5X6
    Series : FASTIRFET™, HEXFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 25V
    Current - Continuous Drain (Id) @ 25°C : 30A (Ta), 70A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 2.4 mOhm @ 30A, 10V
    Vgs(th) (Max) @ Id : 2.1V @ 50µA
    Gate Charge (Qg) (Max) @ Vgs : 32nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 2000pF @ 13V
    FET Feature : -
    Power Dissipation (Max) : 3.4W (Ta), 46W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-PQFN (5x6)
    Package / Case : 8-PowerTDFN

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