NTTFS5820NLTAG Pricing (USD) [298018pcs Stock]
- 1 pcs$0.12411
- 1,500 pcs$0.11207
- Part Number:
- NTTFS5820NLTAG
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 60V 37A 8DFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in ON Semiconductor NTTFS5820NLTAG electronic components. NTTFS5820NLTAG can be shipped within 24 hours after order. If you have any demands for NTTFS5820NLTAG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTTFS5820NLTAG Product Attributes
Part Number :
NTTFS5820NLTAG
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 60V 37A 8DFN
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
11A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
11.5 mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id :
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1462pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.7W (Ta), 33W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-WDFN (3.3x3.3)
Package / Case :
8-PowerWDFN
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