Vishay Siliconix - SQ1912AEEH-T1_GE3

KEY Part #: K6525475

SQ1912AEEH-T1_GE3 Pricing (USD) [485597pcs Stock]

  • 1 pcs$0.07617

Part Number:
SQ1912AEEH-T1_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2N-CH 20V POWERPAK SC70-6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - RF, Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Single, Thyristors - SCRs, Power Driver Modules and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix SQ1912AEEH-T1_GE3 electronic components. SQ1912AEEH-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ1912AEEH-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ1912AEEH-T1_GE3 Product Attributes

Part Number : SQ1912AEEH-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET 2N-CH 20V POWERPAK SC70-6
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 800mA (Tc)
Rds On (Max) @ Id, Vgs : 280 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 1.25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 27pF @ 10V
Power - Max : 1.5W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SC-70-6 Dual
Supplier Device Package : PowerPAK® SC-70-6 Dual

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