ON Semiconductor - NTMFD4C85NT1G

KEY Part #: K6523607

NTMFD4C85NT1G Pricing (USD) [4109pcs Stock]

  • 1,500 pcs$1.03200

Part Number:
NTMFD4C85NT1G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET 2N-CH 30V 8DFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Thyristors - SCRs - Modules, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in ON Semiconductor NTMFD4C85NT1G electronic components. NTMFD4C85NT1G can be shipped within 24 hours after order. If you have any demands for NTMFD4C85NT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMFD4C85NT1G Product Attributes

Part Number : NTMFD4C85NT1G
Manufacturer : ON Semiconductor
Description : MOSFET 2N-CH 30V 8DFN
Series : -
Part Status : Obsolete
FET Type : 2 N-Channel (Dual) Asymmetrical
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 15.4A, 29.7A
Rds On (Max) @ Id, Vgs : 3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1960pF @ 15V
Power - Max : 1.13W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerTDFN
Supplier Device Package : 8-DFN (5x6)

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