IXFH36N55Q2 Pricing (USD) [6522pcs Stock]
- 1 pcs$6.98518
- 30 pcs$6.95043
- Part Number:
- IXFH36N55Q2
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 550V 36A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in IXYS IXFH36N55Q2 electronic components. IXFH36N55Q2 can be shipped within 24 hours after order. If you have any demands for IXFH36N55Q2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH36N55Q2 Product Attributes
Part Number :
IXFH36N55Q2
Manufacturer :
IXYS
Description :
MOSFET N-CH 550V 36A TO-247
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
550V
Current - Continuous Drain (Id) @ 25°C :
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
180 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id :
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
560W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247AD (IXFH)
Package / Case :
TO-247-3
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