NTLJS2103PTBG Pricing (USD) [378276pcs Stock]
- 1 pcs$0.09827
- 3,000 pcs$0.09778
- Part Number:
- NTLJS2103PTBG
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CH 12V 3.5A 6-WDFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in ON Semiconductor NTLJS2103PTBG electronic components. NTLJS2103PTBG can be shipped within 24 hours after order. If you have any demands for NTLJS2103PTBG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTLJS2103PTBG Product Attributes
Part Number :
NTLJS2103PTBG
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CH 12V 3.5A 6-WDFN
Series :
µCool™
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
40 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id :
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
1157pF @ 6V
FET Feature :
-
Power Dissipation (Max) :
700mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-WDFN (2x2)
Package / Case :
6-WDFN Exposed Pad
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