IGLD60R070D1AUMA1 Pricing (USD) [5863pcs Stock]
- 1 pcs$7.02907
- Part Number:
- IGLD60R070D1AUMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- IC GAN FET 600V 60A 8SON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Diodes - Bridge Rectifiers, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IGLD60R070D1AUMA1 electronic components. IGLD60R070D1AUMA1 can be shipped within 24 hours after order. If you have any demands for IGLD60R070D1AUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IGLD60R070D1AUMA1 Product Attributes
Part Number :
IGLD60R070D1AUMA1
Manufacturer :
Infineon Technologies
Description :
IC GAN FET 600V 60A 8SON
Series :
CoolGaN™
Part Status :
Active
FET Type :
N-Channel
Technology :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs(th) (Max) @ Id :
1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-10V
Input Capacitance (Ciss) (Max) @ Vds :
380pF @ 400V
FET Feature :
-
Power Dissipation (Max) :
114W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-LSON-8-1
Package / Case :
8-LDFN Exposed Pad
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