DMN62D1SFB-7B Pricing (USD) [30530pcs Stock]
- 10,000 pcs$0.03628
- Part Number:
- DMN62D1SFB-7B
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 60V 410MA 3DFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Diodes - Rectifiers - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN62D1SFB-7B electronic components. DMN62D1SFB-7B can be shipped within 24 hours after order. If you have any demands for DMN62D1SFB-7B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN62D1SFB-7B Product Attributes
Part Number :
DMN62D1SFB-7B
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 60V 410MA 3DFN
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 40mA, 10V
Vgs(th) (Max) @ Id :
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
2.8nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
80pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
470mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
3-DFN1006 (1.0x0.6)
Package / Case :
3-UFDFN
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