Infineon Technologies - IRF6665TRPBF

KEY Part #: K6420536

IRF6665TRPBF Pricing (USD) [207548pcs Stock]

  • 1 pcs$0.20120
  • 4,800 pcs$0.20020

Part Number:
IRF6665TRPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 100V 4.2A DIRECTFET.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Bridge Rectifiers, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - JFETs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF6665TRPBF Product Attributes

Part Number : IRF6665TRPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 100V 4.2A DIRECTFET
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 62 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 530pF @ 25V
FET Feature : -
Power Dissipation (Max) : 2.2W (Ta), 42W (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DIRECTFET™ SH
Package / Case : DirectFET™ Isometric SH