Infineon Technologies - IPP051N15N5AKSA1

KEY Part #: K6416317

IPP051N15N5AKSA1 Pricing (USD) [13436pcs Stock]

  • 1 pcs$3.06727
  • 500 pcs$1.86831

Part Number:
IPP051N15N5AKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MV POWER MOS.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - IGBTs - Arrays, Power Driver Modules, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP051N15N5AKSA1 Product Attributes

Part Number : IPP051N15N5AKSA1
Manufacturer : Infineon Technologies
Description : MV POWER MOS
Series : OptiMOS™ 5
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 120A
Drive Voltage (Max Rds On, Min Rds On) : 8V, 10V
Rds On (Max) @ Id, Vgs : 5.1 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id : 4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7800pF @ 75V
FET Feature : -
Power Dissipation (Max) : 500mW (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO220-3
Package / Case : TO-220-3