Diodes Incorporated - DMTH43M8LK3-13

KEY Part #: K6394167

DMTH43M8LK3-13 Pricing (USD) [206722pcs Stock]

  • 1 pcs$0.17892

Part Number:
DMTH43M8LK3-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CHANNEL 40V 100A TO252.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single, Thyristors - TRIACs and Transistors - JFETs ...
Competitive Advantage:
We specialize in Diodes Incorporated DMTH43M8LK3-13 electronic components. DMTH43M8LK3-13 can be shipped within 24 hours after order. If you have any demands for DMTH43M8LK3-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMTH43M8LK3-13 Product Attributes

Part Number : DMTH43M8LK3-13
Manufacturer : Diodes Incorporated
Description : MOSFET N-CHANNEL 40V 100A TO252
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 3.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 38.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2693pF @ 20V
FET Feature : -
Power Dissipation (Max) : 88W (Ta)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252, (D-Pak)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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