SI8819EDB-T2-E1 Pricing (USD) [724691pcs Stock]
- 1 pcs$0.05104
- Part Number:
- SI8819EDB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET P-CH 12V 2.9A 4-MICROFOOT.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - RF, Transistors - Special Purpose, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Transistors - JFETs, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI8819EDB-T2-E1 electronic components. SI8819EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8819EDB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8819EDB-T2-E1 Product Attributes
Part Number :
SI8819EDB-T2-E1
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 12V 2.9A 4-MICROFOOT
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 3.7V
Rds On (Max) @ Id, Vgs :
80 mOhm @ 1.5A, 3.7V
Vgs(th) (Max) @ Id :
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 8V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
650pF @ 6V
FET Feature :
-
Power Dissipation (Max) :
900mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
4-MICRO FOOT® (0.8x0.8)
Package / Case :
4-XFBGA
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