Diodes Incorporated - ZXMN2F34MATA

KEY Part #: K6408398

[641pcs Stock]


    Part Number:
    ZXMN2F34MATA
    Manufacturer:
    Diodes Incorporated
    Detailed description:
    MOSFET N-CH 20V 4A DFN-2X2.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Thyristors - SCRs, Transistors - IGBTs - Modules, Diodes - RF, Transistors - IGBTs - Single and Diodes - Bridge Rectifiers ...
    Competitive Advantage:
    We specialize in Diodes Incorporated ZXMN2F34MATA electronic components. ZXMN2F34MATA can be shipped within 24 hours after order. If you have any demands for ZXMN2F34MATA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ZXMN2F34MATA Product Attributes

    Part Number : ZXMN2F34MATA
    Manufacturer : Diodes Incorporated
    Description : MOSFET N-CH 20V 4A DFN-2X2
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
    Rds On (Max) @ Id, Vgs : 60 mOhm @ 2.5A, 4.5V
    Vgs(th) (Max) @ Id : 1.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 2.8nC @ 4.5V
    Vgs (Max) : ±12V
    Input Capacitance (Ciss) (Max) @ Vds : 277pF @ 10V
    FET Feature : -
    Power Dissipation (Max) : 1.35W (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : DFN322
    Package / Case : 3-VDFN