Infineon Technologies - IRFR13N20DCPBF

KEY Part #: K6408345

[8585pcs Stock]


    Part Number:
    IRFR13N20DCPBF
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET N-CH 200V 13A DPAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Thyristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs and Power Driver Modules ...
    Competitive Advantage:
    We specialize in Infineon Technologies IRFR13N20DCPBF electronic components. IRFR13N20DCPBF can be shipped within 24 hours after order. If you have any demands for IRFR13N20DCPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFR13N20DCPBF Product Attributes

    Part Number : IRFR13N20DCPBF
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 200V 13A DPAK
    Series : HEXFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 200V
    Current - Continuous Drain (Id) @ 25°C : 13A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 235 mOhm @ 8A, 10V
    Vgs(th) (Max) @ Id : 5.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 110W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : D-Pak
    Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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