NTLUS3C18PZTBG Pricing (USD) [209407pcs Stock]
- 1 pcs$0.17751
- 3,000 pcs$0.17663
- Part Number:
- NTLUS3C18PZTBG
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CH 12V 4.4A 6UDFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor NTLUS3C18PZTBG electronic components. NTLUS3C18PZTBG can be shipped within 24 hours after order. If you have any demands for NTLUS3C18PZTBG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTLUS3C18PZTBG Product Attributes
Part Number :
NTLUS3C18PZTBG
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CH 12V 4.4A 6UDFN
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
24 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
15.8nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
1570pF @ 6V
FET Feature :
-
Power Dissipation (Max) :
660mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-UDFN (1.6x1.6)
Package / Case :
6-PowerUFDFN
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