Diodes Incorporated - MMBF170Q-13-F

KEY Part #: K6394686

MMBF170Q-13-F Pricing (USD) [1539193pcs Stock]

  • 1 pcs$0.02403
  • 10,000 pcs$0.02158

Part Number:
MMBF170Q-13-F
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 60V 0.5A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Diodes Incorporated MMBF170Q-13-F electronic components. MMBF170Q-13-F can be shipped within 24 hours after order. If you have any demands for MMBF170Q-13-F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MMBF170Q-13-F Product Attributes

Part Number : MMBF170Q-13-F
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 60V 0.5A
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 5 Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 40pF @ 10V
FET Feature : -
Power Dissipation (Max) : 300mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23
Package / Case : TO-236-3, SC-59, SOT-23-3