Part Number :
TK16V60W,LVQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N CH 600V 15.8A 5DFN
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id :
3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 300V
FET Feature :
Super Junction
Power Dissipation (Max) :
139W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
4-DFN-EP (8x8)
Package / Case :
4-VSFN Exposed Pad