Toshiba Semiconductor and Storage - TK16V60W,LVQ

KEY Part #: K6403149

[2458pcs Stock]


    Part Number:
    TK16V60W,LVQ
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    MOSFET N CH 600V 15.8A 5DFN.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - RF ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage TK16V60W,LVQ electronic components. TK16V60W,LVQ can be shipped within 24 hours after order. If you have any demands for TK16V60W,LVQ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TK16V60W,LVQ Product Attributes

    Part Number : TK16V60W,LVQ
    Manufacturer : Toshiba Semiconductor and Storage
    Description : MOSFET N CH 600V 15.8A 5DFN
    Series : DTMOSIV
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 600V
    Current - Continuous Drain (Id) @ 25°C : 15.8A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 190 mOhm @ 7.9A, 10V
    Vgs(th) (Max) @ Id : 3.7V @ 790µA
    Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 300V
    FET Feature : Super Junction
    Power Dissipation (Max) : 139W (Tc)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 4-DFN-EP (8x8)
    Package / Case : 4-VSFN Exposed Pad