NVMFS5H663NLT1G Pricing (USD) [179365pcs Stock]
- 1 pcs$0.20621
- Part Number:
- NVMFS5H663NLT1G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- T8 60V LOW COSS.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Single, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Transistors - IGBTs - Arrays, Transistors - Programmable Unijunction and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in ON Semiconductor NVMFS5H663NLT1G electronic components. NVMFS5H663NLT1G can be shipped within 24 hours after order. If you have any demands for NVMFS5H663NLT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFS5H663NLT1G Product Attributes
Part Number :
NVMFS5H663NLT1G
Manufacturer :
ON Semiconductor
Description :
T8 60V LOW COSS
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
16.2A (Ta), 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
7.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2V @ 56µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1131pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
3.7W (Ta), 63W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
5-DFN (5x6) (8-SOFL)
Package / Case :
8-PowerTDFN, 5 Leads
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