IRFB59N10DPBF Pricing (USD) [37557pcs Stock]
- 1 pcs$0.99926
- 10 pcs$0.90393
- 100 pcs$0.72645
- 500 pcs$0.56500
- 1,000 pcs$0.46814
- Part Number:
- IRFB59N10DPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 59A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Diodes - RF, Transistors - JFETs, Transistors - IGBTs - Modules, Thyristors - SCRs - Modules, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFB59N10DPBF electronic components. IRFB59N10DPBF can be shipped within 24 hours after order. If you have any demands for IRFB59N10DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB59N10DPBF Product Attributes
Part Number :
IRFB59N10DPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 59A TO-220AB
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 35.4A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2450pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.8W (Ta), 200W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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