SQ4153EY-T1_GE3 Pricing (USD) [118801pcs Stock]
- 1 pcs$0.31134
- Part Number:
- SQ4153EY-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET P-CHANNEL 12V 25A 8SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - JFETs, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - RF and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SQ4153EY-T1_GE3 electronic components. SQ4153EY-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ4153EY-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ4153EY-T1_GE3 Product Attributes
Part Number :
SQ4153EY-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CHANNEL 12V 25A 8SOIC
Series :
Automotive, AEC-Q101, TrenchFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
8.32 mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id :
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
151nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
11000pF @ 6V
FET Feature :
-
Power Dissipation (Max) :
7.1W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOIC
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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