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  5. FQI50N06TU

ON Semiconductor - FQI50N06TU

KEY Part #: K6420266

FQI50N06TU Pricing (USD) [176405pcs Stock]

  • 1 pcs$0.32739
  • 1,000 pcs$0.32576
Part Number:
FQI50N06TU
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 60V 50A I2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - IGBTs - Modules, Diodes - Zener - Arrays and Thyristors - SCRs ...
Competitive Advantage:
We specialize in ON Semiconductor FQI50N06TU electronic components. FQI50N06TU can be shipped within 24 hours after order. If you have any demands for FQI50N06TU, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQI50N06TU Product Attributes

Part Number : FQI50N06TU
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 60V 50A I2PAK
Series : QFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 22 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 41nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 1540pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.75W (Ta), 120W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I2PAK (TO-262)
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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