DMTH10H010SCT Pricing (USD) [68703pcs Stock]
- 1 pcs$0.56912
- Part Number:
- DMTH10H010SCT
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET BVDSS 61V-100V TO220AB T.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - JFETs and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMTH10H010SCT electronic components. DMTH10H010SCT can be shipped within 24 hours after order. If you have any demands for DMTH10H010SCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH10H010SCT Product Attributes
Part Number :
DMTH10H010SCT
Manufacturer :
Diodes Incorporated
Description :
MOSFET BVDSS 61V-100V TO220AB T
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
56.4nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4468pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta), 187W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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