Vishay Semiconductor Diodes Division - VS-8ETH06FP-N3

KEY Part #: K6436039

VS-8ETH06FP-N3 Pricing (USD) [50559pcs Stock]

  • 1 pcs$0.77337
  • 1,000 pcs$0.69746

Part Number:
VS-8ETH06FP-N3
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 8A TO220. Rectifiers 6A 600V 18ns Hyperfast
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-8ETH06FP-N3 electronic components. VS-8ETH06FP-N3 can be shipped within 24 hours after order. If you have any demands for VS-8ETH06FP-N3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-8ETH06FP-N3 Product Attributes

Part Number : VS-8ETH06FP-N3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 8A TO220
Series : FRED Pt®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 8A
Voltage - Forward (Vf) (Max) @ If : 2.4V @ 8A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Current - Reverse Leakage @ Vr : 50µA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : TO-220-2 Full Pack
Supplier Device Package : TO-220-2 Full Pack
Operating Temperature - Junction : -65°C ~ 175°C

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