Vishay Semiconductor Diodes Division - ES2A-M3/52T

KEY Part #: K6457930

ES2A-M3/52T Pricing (USD) [771501pcs Stock]

  • 1 pcs$0.05059
  • 10,500 pcs$0.05034

Part Number:
ES2A-M3/52T
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 50V 2A DO214AA. Rectifiers 2A,50V,20NS,UF Rect,SMD
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division ES2A-M3/52T electronic components. ES2A-M3/52T can be shipped within 24 hours after order. If you have any demands for ES2A-M3/52T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES2A-M3/52T Product Attributes

Part Number : ES2A-M3/52T
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 50V 2A DO214AA
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 50V
Current - Average Rectified (Io) : 2A
Voltage - Forward (Vf) (Max) @ If : 900mV @ 2A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 10µA @ 50V
Capacitance @ Vr, F : 18pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA (SMB)
Operating Temperature - Junction : -55°C ~ 150°C

You May Also Be Interested In
  • RGL34B-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM

  • RGL34D-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 500MA DO213. Diodes - General Purpose, Power, Switching 200 Volt 0.5A 150ns 10 Amp IFSM

  • RGL34B-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM

  • RGL34J-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 500MA DO213. Diodes - General Purpose, Power, Switching 600 Volt 0.5A 250ns 10 Amp IFSM

  • BYM07-200-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 500MA DO213. Rectifiers 0.5 Amp 200 Volt

  • BYM07-100-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 500MA DO213. Rectifiers 0.5 Amp 100 Volt