Vishay Siliconix - SUP60N10-18P-E3

KEY Part #: K6405896

[1506pcs Stock]


    Part Number:
    SUP60N10-18P-E3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET N-CH 100V 60A TO220AB.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF, Power Driver Modules, Diodes - Zener - Arrays, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modules and Diodes - Zener - Single ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SUP60N10-18P-E3 electronic components. SUP60N10-18P-E3 can be shipped within 24 hours after order. If you have any demands for SUP60N10-18P-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SUP60N10-18P-E3 Product Attributes

    Part Number : SUP60N10-18P-E3
    Manufacturer : Vishay Siliconix
    Description : MOSFET N-CH 100V 60A TO220AB
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 60A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 8V, 10V
    Rds On (Max) @ Id, Vgs : 18.3 mOhm @ 15A, 10V
    Vgs(th) (Max) @ Id : 4.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 75nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 2600pF @ 50V
    FET Feature : -
    Power Dissipation (Max) : 3.75W (Ta), 150W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220AB
    Package / Case : TO-220-3