SQS481ENW-T1_GE3 Pricing (USD) [236499pcs Stock]
- 1 pcs$0.15640
- 3,000 pcs$0.13247
- Part Number:
- SQS481ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET P-CH 150V 4.7A 1212-8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Thyristors - SCRs, Diodes - Rectifiers - Single and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SQS481ENW-T1_GE3 electronic components. SQS481ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS481ENW-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQS481ENW-T1_GE3 Product Attributes
Part Number :
SQS481ENW-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 150V 4.7A 1212-8
Series :
Automotive, AEC-Q101, TrenchFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
150V
Current - Continuous Drain (Id) @ 25°C :
4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.095 Ohm @ 5A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
385pF @ 75V
FET Feature :
-
Power Dissipation (Max) :
62.5W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® 1212-8
Package / Case :
PowerPAK® 1212-8
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