TPWR8004PL,L1Q Pricing (USD) [51384pcs Stock]
- 1 pcs$0.76912
- 5,000 pcs$0.76529
- Part Number:
- TPWR8004PL,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 40V 150A 8DSOP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Thyristors - SCRs - Modules, Thyristors - SCRs, Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TPWR8004PL,L1Q electronic components. TPWR8004PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPWR8004PL,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPWR8004PL,L1Q Product Attributes
Part Number :
TPWR8004PL,L1Q
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 40V 150A 8DSOP
Series :
U-MOSIX-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
0.8 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
103nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
9600pF @ 20V
FET Feature :
-
Power Dissipation (Max) :
1W (Ta), 170W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-DSOP Advance
Package / Case :
8-PowerVDFN
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