Description :
MOSFET 2N-CH 200V 33A I4-PAC
FET Type :
2 N-Channel (Dual)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
33A
Rds On (Max) @ Id, Vgs :
40 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3700pF @ 25V
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Package / Case :
i4-Pac™-5
Supplier Device Package :
ISOPLUS i4-PAC™